13th Course : Crystal Growth in Science and Technology

27 Aug to 7 Sept 1987

a NATO Advanced Study Institute


Director : Hanns Arend. ETH, Zuerich

Purpose of the Course

Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics.

The aim of this course being to stress the interdisciplinary character of the subject, selected fundamental principles are being reviewed and cross links between basic and applied aspects are therefore brought to evidence. It is a very well known fact that the intensive developments of crystal growth lead to a progresive narrowing of interests in highly specialized directions which is particularly harmful to young researchers. The organizers sincerely hope that the programme would help to broaden up the horizon of the attendees. It is equally their wish to contribute within the traditional spirit of the school of crystallography in Erice to the promotion of mutual understanding, personal friendship and future collaboration.

Sequencial scientific contributions by invited LECTURERS

A theoretical crystal grower's view of phase equilibrium R. GHEZ, IBM, Yorktown Heights, NY, USA
Homogeneous nucleation B. MUTAFTSCHIEV, CNRS, Villers-les-Nancy, France
Crystal growth and the properties of polymers D.C. BASSETT, University of Reading, UK
Crystal growth and geosciences I. SUNAGAWA, Tohoku University, Sendai, Japan
Crystal growth and crystal chemistry H. AREND, ETH Zuerich, Switzerland
Basic mechanism of crystal growth D. AQUILANO, University of Turin, Italy
Fundamentals of crystal growth J.J. FAVIER, CEA-CEN, Grenoble, France
Crystal growth in biosciences C. E. BUGG, Uniuversity of Alabama, Birmingham, USA
Crystal growth and solid state physics E. KALDIS, ETH Zuerich, Switzerland
Dendritic crystal growth M.E. GLICKSMAN, Rensselaer Polytechnic Inst., Troy, USA
Polytypism and crystal growth of inorganic solids A. BARONNET, CRMC2-CNRS, Marseille, France
Experimental studies of crystal growth F. BEDARIDA, University of Genoa, Italy
Technologies based on organo-metallic vapour phase epitaxy G.B. STRINGFELLOW, University of Utah, Salt Lake City, USA
Elementary semiconductors L. J. GILING, University of Nijmegen, Netherlands
Binary semiconductors : III-V compounds L. ZANOTTI, MASPEC, Parma, Italy
Fundamentals of vapour growth F. ROSENBERGER, University of Alabama, Huntsville, USA
Twinning in crystals B. BREZINA, Czechoslovak Academy of Sciences, Prague, Czechoslovakia
Industrial crystallization R. DAVEY, ICI, Runcorn, Cheshire, UK
Fundamentals of solution growth W. R. WILCOX, Clarkson University, Potsdam, NY, USA
Fundamentals of flux growth D. ELWELL, Elwell Associates, Carlsbad, CA, USA
Growth of shaped growths R. S. FEIGELSON, Center for Materials Research, Stanford, USA
Binary semiconductors: II-VI compounds C. PAORICI, MASPEC, Parma, Italy
Molecular beam epitaxy and related high-vacuum growth technology M. ILEGEMS, EPF, Lausanne, Switzerland
Fundamentals of epitaxy R. KERN, CRMC2.CNRS, Marseille, France
Liquid phase epitaxy of garnets W. TOLKSDORF, Philips GmbH, Hamburg, F.R. Germany



Extracted from several documents.
Jan 11, 2008

On their knees, you recognize : Lodovico, Pinto, Tolkdorf, Sgualdino, Grabmaier, Joanne Rout, Revcolevski, Stockel, Sunagawa, Lucio Zanotti;
above Sunagawa you see Paola and then Hans Arend on her right and Altintas on her left