Jan 11, 2008
13th Course : Crystal Growth in Science and Technology
27 Aug to 7 Sept 1987
a NATO Advanced Study Institute
Director : Hanns Arend. ETH, Zuerich
Purpose of the Course
Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics.
The aim of this course being to stress the interdisciplinary character of the subject, selected fundamental principles are being reviewed and cross links between basic and applied aspects are therefore brought to evidence. It is a very well known fact that the intensive developments of crystal growth lead to a progresive narrowing of interests in highly specialized directions which is particularly harmful to young researchers. The organizers sincerely hope that the programme would help to broaden up the horizon of the attendees. It is equally their wish to contribute within the traditional spirit of the school of crystallography in Erice to the promotion of mutual understanding, personal friendship and future collaboration.
Sequencial scientific contributions by invited LECTURERS
| A theoretical crystal grower's view of phase equilibrium | R. GHEZ, IBM, Yorktown Heights, NY, USA |
| Homogeneous nucleation | B. MUTAFTSCHIEV, CNRS, Villers-les-Nancy, France |
| Crystal growth and the properties of polymers | D.C. BASSETT, University of Reading, UK |
| Crystal growth and geosciences | I. SUNAGAWA, Tohoku University, Sendai, Japan |
| Crystal growth and crystal chemistry | H. AREND, ETH Zuerich, Switzerland |
| Basic mechanism of crystal growth | D. AQUILANO, University of Turin, Italy |
| Fundamentals of crystal growth | J.J. FAVIER, CEA-CEN, Grenoble, France |
| Crystal growth in biosciences | C. E. BUGG, Uniuversity of Alabama, Birmingham, USA |
| Crystal growth and solid state physics | E. KALDIS, ETH Zuerich, Switzerland |
| Dendritic crystal growth | M.E. GLICKSMAN, Rensselaer Polytechnic Inst., Troy, USA |
| Polytypism and crystal growth of inorganic solids | A. BARONNET, CRMC2-CNRS, Marseille, France |
| Experimental studies of crystal growth | F. BEDARIDA, University of Genoa, Italy |
| Technologies based on organo-metallic vapour phase epitaxy | G.B. STRINGFELLOW, University of Utah, Salt Lake City, USA |
| Elementary semiconductors | L. J. GILING, University of Nijmegen, Netherlands |
| Binary semiconductors : III-V compounds | L. ZANOTTI, MASPEC, Parma, Italy |
| Fundamentals of vapour growth | F. ROSENBERGER, University of Alabama, Huntsville, USA |
| Twinning in crystals | B. BREZINA, Czechoslovak Academy of Sciences, Prague, Czechoslovakia |
| Industrial crystallization | R. DAVEY, ICI, Runcorn, Cheshire, UK |
| Fundamentals of solution growth | W. R. WILCOX, Clarkson University, Potsdam, NY, USA |
| Fundamentals of flux growth | D. ELWELL, Elwell Associates, Carlsbad, CA, USA |
| Growth of shaped growths | R. S. FEIGELSON, Center for Materials Research, Stanford, USA |
| Binary semiconductors: II-VI compounds | C. PAORICI, MASPEC, Parma, Italy |
| Molecular beam epitaxy and related high-vacuum growth technology | M. ILEGEMS, EPF, Lausanne, Switzerland |
| Fundamentals of epitaxy | R. KERN, CRMC2.CNRS, Marseille, France |
| Liquid phase epitaxy of garnets | W. TOLKSDORF, Philips GmbH, Hamburg, F.R. Germany |
Extracted from several documents.
Jan 11, 2008
On their knees, you recognize : Lodovico, Pinto, Tolkdorf, Sgualdino,
Grabmaier, Joanne Rout, Revcolevski, Stockel, Sunagawa, Lucio Zanotti;
above Sunagawa you see Paola and then Hans Arend on her right
and Altintas on her left